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Microchip ultrafast laser crystal has been successfully applied in photoelectric area

2022-02-18

Coupletech offer microchip Laser Crystal for disc laser. Thermal lens effects produced in conventional semiconductor-pumped solid-state lasers result in degraded laser beam quality and limit power output. The thickness of the microchip laser medium is usually below 1mm. Under the conditions of uniform pumping and cooling, the medium heat flow is approximately one-dimensional conduction perpendicular to the surface of the wafer, minimizing the effect of thermal distortion caused by the thermal lens effect. The microchip laser can output high beam quality (TEM00 Gaussian mode) and monochromaticity (single longitudinal mode, line width less than 5kHz) laser, which is very important in the fields of communication, measurement, medical treatment, industrial processing, scientific research and military applications. application.

Coupletech supply all kinds of laser crystal including Nd:YVO4, Nd:YAG, Diffusion Bonded Composite Crystal, Nd:YLF, Yb:YAG, Cr:YAG, and their micro-disc crystal. e.g. ultra-thin Nd:YAG+Cr:YAG crystal are usually used for disc ultrafast laser, and it is designed for very small volume for fs laser and ps laser. Now more and more new kinds of laser crystal is appeared, Yb doped laser crystal has new member, namely, research shows that a new concept of “strong field-coupled Yb3+ ion quasi-four-level system”—using The strong field coupling increases the energy level of Yb3+ ion splitting, reduces the proportion of hot population under the laser, and achieves Yb3+ ion quasi four-level laser operation. Select Yb with the highest thermal conductivity (7.5Wm-1K-1) and the only negative refractive index temperature coefficient (dn/dT=-6.3 ́10-6K-1) in the positive and negative silicate crystals: a new kind of crystal Sc2SiO5 (Yb:SSO) crystal is grown by the Czochralski method. The crystal laser output and ultrafast laser output has been implemented, Yb:SSO microchips with thicknesses of 150 μm were used to achieve 75W (M2<1.1) and 280W high beam quality, high power continuous laser output 298fs. Recently, a 73 fs mode-locked ultrafast laser output has been implemented in this crystal.


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